Search results for "Resistive switching"
showing 10 items of 18 documents
Electrochemically prepared oxides for resistive switching devices
2018
Redox-based resistive switching memories (ReRAM) based on metal oxides are considered as the next generation non-volatile memories and building units for neuromorphic computing. Using different deposition techniques results however in different structural and electric properties, modulating the device performance. In this study HfO2 and Nb2O5 were prepared electrochemically by anodizing sputtering-deposited Hf and Nb in borate buffer solution. Photoelectrochemical measurements were used to study the solid state properties of the anodic oxides, such as band gap and flat band potential. In the case of anodic HfO2, detected photocurrent is ascribed to optical transitions between localized (gen…
Stochastic model of memristor based on the length of conductive region
2021
Abstract We propose a stochastic model of a voltage controlled bipolar memristive system, which includes the properties of widely used dynamic SPICE models and takes into account the fluctuations inherent in memristors. The proposed model is described by rather simple equations of Brownian diffusion, does not require significant computational resources for numerical modeling, and allows obtaining the exact analytical solutions in some cases. The noise-induced transient bimodality phenomenon, arising under resistive switching, was revealed and investigated theoretically and experimentally in a memristive system, by finding a quite good qualitatively agreement between theory and experiment. B…
Electrochemically Prepared High-k Thin Films for Resistive Switching Devices
Field- and irradiation-induced phenomena in memristive nanomaterials
2016
The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and …
Resistive switching in memristors based on yttria-stabilized zirconia
2021
Nanosession: Spin Tunneling Systems
2013
Anodic TiO2 in ReRAM: Influence of Si-doping on the Resistive Switching Properties of Titanium Oxide
2016
TiO2 has attracted much attention due to its potential widespread applications, including capacitors, photocatalysis, solar energy conversion and, more recently, redox-based random access memories (ReRAM). For micro and nano-electronics applications, TiO2 is usually grown through Chemical and Physical Vapour Deposition techniques, such as Atomic Layer Deposition (ALD), Pulsed Laser Deposition (PLD), Sputtering and so on. In ReRAM field, the control of oxide structure (crystallinity, defects concentration etc.) and the choice of electrodes are crucial to have resistive switching phenomena inside the oxide. Thus, anodizing can be proposed as a simple and low cost way to grow TiO2 and to tune …
Memristors and nonequilibrium stochastic multistable systems
2022
The main aim of this special issue is to report the recent advances and new trends in memristors and nonequilibrium stochastic multistable systems, both theoretically and experimentally, within an interdisci-plinary context. In particular, memristors are multistable systems whose switching dynamics is a stochastic process, which can be controlled by internal and external noise sources, unveiling the constructive role of random fluctuations. Furthermore, the use of memristors as memory elements in neuromorphic systems with noise-assisted persistence of memory states, chaotic dynamics, metastable chaos and chaos synchronization, new stochastic nonlinear models, noise-induced phenomena such as…
Resistive switching behaviour in ZnO and VO 2 memristors grown by pulsed laser deposition
2014
The resistive switching behaviour observed in microscale memristors based on laser ablated ZnO and VO 2 is reported. A comparison between the two materials is reported against an active device size. The results show that devices up to 300 × 300 μm 2 exhibit a memristive behaviour regardless of the device size, and 100 × 100 μm 2 ZnO-based memristors have the best resistance off/on ratio.
Resistive switching in microscale anodic titanium dioxide-based memristors
2018
Licence CC BY-NC-ND The potentiality of anodic TiO2 as an oxide material for the realization of resistive switching memory cells has been explored in this paper. Cu/anodic-TiO2/Ti memristors of different sizes, ranging from 1 × 1 μm2 to 10 × 10 μm2 have been fabricated and characterized. The oxide films were grown by anodizing Ti films, using three different process conditions. Measured IV curves have shown similar asymmetric bipolar hysteresis behaviors in all the tested devices, with a gradual switching from the high resistance state to the low resistance state and vice versa, and a R_OFF/R_ON ratio of 80 for the thickest oxide film devices.